Polarity determination in ZnSe nanowires by HAADF STEM

Quantitative analysis of optical polarization in semiconductor nanostructures by polarized cathodoluminescence spectroscopy in a transmission electron microscope Microstructure and optical properties of ZnSe nanowires grown on .ZnSe(001) with Fe catalysts Formation mechanism of silicon surface manoholes

Room temperature, ppb-level NO2 gas sensing of multiple-networked ZnSe nanowire sensors under UV illumination

Reports of the gas sensing properties of ZnSe are few, presumably because of the decomposition and oxidation of ZnSe at high temperatures. In this study, ZnSe nanowires were synthesized by the thermal evaporation of ZnSe powders and the sensing performance of multiple-networked ZnSe nanowire sensors toward NO2 gas was examined. The results showed that ZnSe might be a promising gas sensor materi...

TEM investigation of nucleation and initial growth of ZnSe nanowires

Single crystalline ZnSe nanowires were fabricated on GaAs substrates by molecular beam epitaxy technique via Au-catalyzed vapor-liquid-solid reaction. The nucleation and initial growth of the nanowires were investigated by high-resolution transmission electron microscopy. It was revealed that Au catalysts initially reacted with the substrate forming binary AuGa2 alloy droplets. The sizes of the...

Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy

Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by molecular beam epitaxy using Au or Ag catalyst films in the temperature range 400–550 ◦C. The highest density of small-diameter (10 nm), highly-crystalline ZnSe nanowires is achieved by using Au at 400 ◦C. Direct growth onto transmission electron microscope grids clearly indicates a tip-growth regime. Pre-patterning of the cataly...

Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires

Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires W.A. Bhutto, Z.M. Wu∗, Y.Y. Cao, W.P. Wang and J.Y. Kang∗ Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Xiamen 361005, P.R. China ZnO/ZnSe coaxial nanowires with di erent ZnO core diameters were synthesized by using a two-step chemical vapor deposition. The ...